4-397

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the In-

tegral Reverse P-N

Junction Rectifier

-

-

3.1

A

Pulse Source to Drain Current

(Note 3)

-

-

12

A

Source to Drain Diode Voltage (Note 2)

(Figure 13)

-

-

1.6

V

Reverse Recovery Time

120

270

600

ns

Reverse Recovery Charge

0.64

1.4

3.0

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

25

50

75

100

125

150

175

0

0

0

0.2

0.4

0.6

0.8

1.0

1.2

0

50

100

150

25

75

125

4.0

3.2

2.4

1.6

0.8

1

0.1

0.1

1

10

SINGLE PULSE

NOTES:

0.1

0.02

0.2

0.5

0.01

0.05

10

IRFR320, IRFU320