HAT2202C_15 datasheet(4/7 Pages) RENESAS

Part #	HAT2202C

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

HAT2202C

R07DS1179EJ0700 Rev.7.00

Page 4 of 6

Mar 19, 2014

Case Temperature

Tc

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

75

60

45

30

15

–25

0

25

50

75

100 125 150

0

0.3

0.1

1

10

100

30

10

3

1

0.3

0.1

3

25

°C

75

°C

VGS = 2.5 V

1, 1.5 ,3 A

0

10

20

1000

100

300

40

0

8

30

6

20

4

10

2

24

6

8

10

0

100

1

10

0.1

0.3

1

3

10

30

100

30

10

Ciss

Coss

ID = 3 A

VDD

VGS

515

25

0

0.4

0.8

1.2

1.6

2.0

20

8

VGS = 0 V

4

12

16

3 A

ID = 1, 1.5 A

4.5 V

5 V

Crss

VGS = 4.5 V, VDD = 10 V

Rg = 4.7

Ω, duty ≤ 1 %

Tc = –25

°C

Pulse Test

VDS = 10 V

Pulse Test

VGS = 0

f = 1 MHz

VDD = 5 V

10 V

20 V

VDD = 20 V

10 V

5 V

tr

tf

td(off)

td(on)

Pulse Test

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