HAT2205C_15 datasheet(3/7 Pages) RENESAS

Part #	HAT2205C

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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HAT2205C

R07DS1181EJ0500 Rev.5.00

Page 3 of 6

Mar 19, 2014

Main Characteristics

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

1.6

1.2

0.8

0.4

0

50

100

150

200

10

8

6

4

2

0

24

6

8

10

20

16

12

8

4

0

12

3

4

5

1.4 V

25°C

–25°C

100

0

2

6

8

10

0.1

10

1

100

1000

10

200

1.8V

1.6 V

2.5 V

1.8 V

1.5 A

3 A

4

1

0.1

0.01

0.1

1

10

100

0.001

10

100

DC

operation

PW

=

10

ms

1 ms

100

μs

10

μs

Pulse Test

VGS = 1.2 V

ID = 0.5 A

VGS = 4.5 V

Test Condition :

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm), Ta = 25

°C

Tc = 75°C

VDS = 10 V

Pulse Test

Ta = 25°C,1shot pulse

When using the FR4 board.

Operation in this area

is limited by R

DS(on)

5 V

2.5 V

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HAT2205C Datasheet(PDF) 3 Page - Renesas Technology Corp

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