Electronic Components Datasheet Search |
|
HAT2281C Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
HAT2281C Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1185EJ0300 Rev.3.00 Page 1 of 6 Mar 19, 2014 Data Sheet HAT2281C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 109 m Ω typ.(at V GS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 6 5 4 Indexband G D S 6 1 5 D 2 D 3 D 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 60 V Gate to Source voltage VGSS ±12 V Drain current ID 2 A Drain peak current ID (pulse) Note1 8 A Body - Drain diode reverse Drain current IDR 2 A Channel dissipation Pch Note2 850 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) R07DS1185EJ0300 (Previous: REJ03G1328-0200) Rev.3.00 Mar 19, 2014 |
Similar Part No. - HAT2281C_15 |
|
Similar Description - HAT2281C_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |