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R1Q4A4418RBG-40IB0 Datasheet(PDF) 11 Page - Renesas Technology Corp

Part # R1Q4A4418RBG-40IB0
Description  144-Mbit DDR II SRAM 2-word Burst
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1Q4A4418RBG-40IB0 Datasheet(HTML) 11 Page - Renesas Technology Corp

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R1Q4A4436RBG, R1Q4A4418RBG
Datasheet
R10DS0146EJ0102 Rev.1.02
Page 11 of 30
Aug 01, 2014
K Truth Table
Operation
K
/LD
R-/W
DQ
Write Cycle:
Load address, input write
data on two consecutive
K and /K rising edges
L
L
Data in
Input data
D(A+0)
D(A+1)
Input clock
K(t+1) ↑
/K(t+1) ↑
Read Cycle:
Load address, output read
data on two consecutive
C and /C rising edges
L
H
Data out
Output data
Q(A+0)
Q(A+1)
Input clock
/C(t+1) ↑
C(t+2) ↑
NOP (No operation)
H
x
High-Z
Standby (Clock stopped)
Stopped
x
x
Previous state
Notes:
1.
H: high level, L: low level,
×: don’t care, ↑: rising edge.
2.
Data inputs are registered at K and /K rising edges. Data outputs are delivered at C clock edges, except if C
and /C are high, then data outputs are delivered at K clock edges.
3.
/LD and R-/W must meet setup/hold times around the rising edges (low to high) of K and are registered at
the rising edge of K.
4.
This device contains circuitry that will ensure the outputs will be in high-Z during power-up.
5.
Refer to state diagram and timing diagrams for clarification.
6.
When clocks are stopped, the following cases are recommended; the case of K = low, /K = high, C = low
and /C = high, or the case of K = high, /K = low, C = high and /C = low. This condition is not essential, but
permits most rapid restart by overcoming transmission line charging symmetrically.
7.
A+0 refers to the address input during a WRITE or READ cycle. A+1 refers to the next internal burst
address in accordance with the linear burst sequence.
Burst Address Table
First Address (External)
Second Address (Internal)
X..X0
X..X1
X..X1
X..X0


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