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R1QNA4418RBG-30IB0 Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # R1QNA4418RBG-30IB0
Description  144-Mbit QDR?줚I SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1QNA4418RBG-30IB0 Datasheet(HTML) 9 Page - Renesas Technology Corp

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R1QNA4436RBG,R1QNA4418RBG
Datasheet
R10DS0148EJ0200 Rev.2.00
Page 9 of 29
Aug 01, 2014
Status
Power Up &
Unstable Stage
NOP &
Set-up Stage
Normal
Operation
V
DD
SET-UP Cycle
V
DDQ
V
REF
/DOFF
K, /K
Fix High (=Vddq)
Power-up and Initialization Sequence
VDD must be stable before K, /K clocks are applied.
- Recommended voltage application sequence : VSS → VDD → VDDQ & VREF → VIN. (0 V to VDD, VDDQ < 200 ms)
- Apply VREF after VDDQ or at the same time as VDDQ.
- Then execute either one of the following sequences.
1. Single Clock Mode
- Drive /DOFF high (/DOFF can be tied high from the start).
- Then provide stable clocks (K, /K) for at least 20 us.
2. PLL Off Mode (/DOFF tied low)
- In the "NOP and setup stage", provide stable clocks (K, /K) for at least 20 us.
PLL Constraints
1.
These chips use the PLL. The clock input should have low phase jitter which is specified as tKC var.
2.
The lower end of the frequency at which the PLL can operate is 250 MHz.
(Please refer to AC Characteristics table for detail.)
3.
When the operating frequency is changed or /DOFF level is changed, setup cycles are required again.


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