R07DS1234EJ0200 Rev.2.00

Page 1 of 7

Oct 27, 2014

RJE0616JSP

-60V, -4A Silicon P Channel Thermal FET

Power Switching

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

• For Automotive applications

• Built-in the over temperature shut-down circuit.

• High endurance capability against to the short circuit.

• Latch type shut down operation (need 0 voltage recovery).

• Built-in the current limitation circuit.

• Low on-resistance R

Ω Typ, 90 mΩ Max (V

• High density mounting

• AEC-Q101 compliant

Outline

1 2

3

4

5

6

7

8

1, 2, 3

Source

4

Gate

5, 6, 7, 8

Drain

D

S

G

4

1

58

D

6

D

7

D

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Current

Limitation

Circuit

S

3

S

2

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

–60

V

Gate to source voltage

–16

V

2.5

V

Drain current

Note3

–4

A

Body-drain diode reverse drain current

–4

A

Avalanche current

Note 2

–4

A

Avalanche energy

Note 2

68.6

mJ

Channel dissipation

Pch

Note 1

2.5

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1

When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

2. Tch = 25

°C, Rg ≥ 50 Ω

3. It provides by the current limitation lower bound value.

R07DS1234EJ0200

(Previous: REJ03G1944-0100)

Rev.2.00

Oct 27, 2014