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RJE0616JSP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJE0616JSP Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS1234EJ0200 Rev.2.00 Page 1 of 7 Oct 27, 2014 Preliminary Datasheet RJE0616JSP -60V, -4A Silicon P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • For Automotive applications • Built-in the over temperature shut-down circuit. • High endurance capability against to the short circuit. • Latch type shut down operation (need 0 voltage recovery). • Built-in the current limitation circuit. • Low on-resistance R DS(on) : 77 m Ω Typ, 90 mΩ Max (V GS = –10 V) • High density mounting • AEC-Q101 compliant Outline 1 2 3 4 5 6 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) D S G 4 1 58 D 6 D 7 D Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit Current Limitation Circuit S 3 S 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS –16 V VGSS 2.5 V Drain current ID Note3 –4 A Body-drain diode reverse drain current IDR –4 A Avalanche current IAP Note 2 –4 A Avalanche energy EAR Note 2 68.6 mJ Channel dissipation Pch Note 1 2.5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1 When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2. Tch = 25 °C, Rg ≥ 50 Ω 3. It provides by the current limitation lower bound value. R07DS1234EJ0200 (Previous: REJ03G1944-0100) Rev.2.00 Oct 27, 2014 |
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