2SB709A_15 datasheet(1/3 Pages) SECOS

Part #	2SB709A

Description	PNP Silicon General Purpose Transistor

Download	3 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

2SB709A

-0.2A , -45V

PNP Silicon General Purpose Transistor

21-Jan-2011 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

For general amplification

Complementary of the 2SD601A

CLASSIFICATION OF hFE

Product-Rank

2SB709A-Q

2SB709A-R

2SB709A-S

Range

160~260

210~340

290~460

Marking

BQ1

BR1

BS1

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOT-23

3K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-45

V

Collector to Emitter Voltage

VCEO

-45

V

Emitter to Base Voltage

VEBO

-7

V

Collector Currrent

IC

-100

mA

Collector Power Dissipation

PC

200

mW

Junction & Storage Temperature

TJ, TSTG

150, -55 ~ 150

℃

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

-45

-

V

IC= -10

μA, I

E=0

Collector-emitter breakdown voltage

V(BR)CEO

-45

-

V

IC= -2mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

-7

-

V

IE= -10

μA, I

C=0

Collector cut-off current

ICBO

-

-0.1

μA

VCB= -20V, IE=0

Emitter cut-off current

ICEO

-

-100

μA

VCE= -10V, IB=0

Collector-emitter saturation voltage

VCE(sat)

-

-0.5

V

IC= -100mA, IB= -10mA

DC current gain

hFE

160

-

460

VCE= -10V, IC= -2mA

Transition frequency

fT

60

-

MHz

VCE= -10V, IC= -1mA, f=200MHz

Collector output capacitance

Cob

-

2.7

pF

VCB= -10V, IE=0, f=1MHz

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

SOT-23

Similar Part No. - 2SB709A_15

Manufacturer	Part #	Datasheet	Description
Guangdong Kexin Industr...	2SB709A	1Mb / 2P	PNP Transistors

More results

Similar Description - 2SB709A_15

Manufacturer	Part #	Datasheet	Description
Weitron Technology	A733LT1	1Mb / 4P	General Purpose Transistor PNP Silicon
ON Semiconductor	MMBT2907AWT1	76Kb / 4P	General Purpose Transistor(PNP Silicon) April, 2004 ??Rev. 3
Weitron Technology	BC807-16	322Kb / 4P	General Purpose Transistor PNP Silicon
Weitron Technology	MMBT3906	300Kb / 6P	General Purpose Transistor PNP Silicon
SeCoS Halbleitertechnol...	2SA727	250Kb / 2P	PNP Silicon General Purpose Transistor
ON Semiconductor	BCW68GLT1G	113Kb / 3P	General Purpose Transistor PNP Silicon August, 2009 ??Rev. 5
Zowie Technology Corpor...	MMBT2907A	90Kb / 4P	GENERAL PURPOSE TRANSISTOR PNP SILICON
SeCoS Halbleitertechnol...	2N2907A	210Kb / 5P	PNP Silicon General Purpose Transistor
	2SA1036K	227Kb / 2P	PNP Silicon General Purpose Transistor
	2SA1576F	439Kb / 3P	PNP Silicon General Purpose Transistor
	2SB709A	564Kb / 3P	PNP Silicon General Purpose Transistor

More results

2SB709A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SB709A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - 2SB709A_15

Similar Description - 2SB709A_15

Html Pages

1 2 3

Datasheet Download

Link URL