SI9926DY-HF-S datasheet(4/4 Pages) KEXIN

Part #	SI9926DY-HF-S

Description	Dual N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

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Typical Characterisitics

0

1

2

3

4

5

0

2

4

6

8

10

Qg, GATE CHARGE (nC)

ID = 3A

VDS = 5V

10V

15V

0

200

400

600

800

1000

0

4

8

12

16

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

VDS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

100 s

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

R JA = 135oC/W

TA = 25oC

10ms

1ms

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

R JA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

R JA(t) = r(t) + R JA

R JA = 135°C/W

TJ - TA = P * R JA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

Dual N-Channel MOSFET

SI9926DY-HF (KI9926DY-HF)

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SI9926DY-HF-S Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

SI9926DY-HF-S Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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