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2SD2655 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SD2655
Description  Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD2655 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SD2655
Preliminary
R07DS0281EJ0400 Rev.4.00
Page 3 of 6
Jan 10, 2014
Main Characteristics
0
50
100
150
200
Maximum Collector Dissipation Curve
0.6
10
100
1
00.8
Base to Emitter Voltage
VBE (V)
Typical transfer Characteristics
0.2
0.4
1.0
0
1.2
0.8
2.0
02
4
6
Typical Output Characteristics (1)
Ambient Temperature
Ta
(°C)
Collector to Emitter Voltage
VCE (V)
Collector to Emitter Voltage
VCE (V)
0.4
1.6
8
1200
1000
800
400
200
10
Pulse
IB = 350
µA
300 µA
250 µA
200 µA
150 µA
100
µA
50
µA
Typical Output Characteristics (2)
Pulse
IB = 1mA
2mA
3mA
4mA
5mA
6mA
1000
V
= 2V
Pulse
CE
200
100
500
400
300
200
100
When using alumina ceramic board
S = 25 mm x 60 mm, t = 0.7 mm
100
1000
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
1
100
1000
110
100
1000
Collector Current IC (mA)
Saturation Voltage vs.
Collector Current
0.001
0.01
0.1
1
110
10
VBE(sat)
VCE(sat)
IC/IB = 10
Pulse
VCE = 2V
Pulse


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