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BAS40WS Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS40WS Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente BAS40WS Surface Mount Schottky Barrier Diodes 01-August-2009 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Turn-on Voltage Fast Switching PN Junction Guard for Transient and ESD Protection Designed for Surface Mount Application Plastic Material –UL Recognition Flammability Classification 94V-O MARKING 43 ABSOLUTE MAXIMUM RATINGS (Single diode, at Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR 40 V Forward Continuous Current IF 200 mA Peak Forward Surge Current, t≦1.0 s IFSM 600 mA Thermal Resistance Junction−to−Ambient RθJA 625 °C/W Power Dissipation PD 200 mW Junction, Storage Temperature TJ, TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 40 - - V IR = 10 μA Reverse Current IR - 20 200 nA VR = 30V VF1 - - 380 mV IF = 1mA VF2 - - 500 mV IF = 10mA Forward Voltage VF3 - - 1000 mV IF = 40mA Diode Capacitance between Terminals CT - 4.0 5.0 pF VR = 0, f=1MHz Reverse Recovery Time tRR - 5 nS IRR = 0.1XIR, IR=IF=10mA, RL=100 Ω Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 Cathode Band G E A J F D H C B 1 2 SOD-323 |
Similar Part No. - BAS40WS_15 |
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Similar Description - BAS40WS_15 |
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