2-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Formerly FRL130R4

June 1998

JANSR2N7272

8A, 100V, 0.180 Ohm, Rad Hard,

N-Channel Power MOSFET

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Dose Rate

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Die family TA17631.

MIL-PRF-19500/604.

Description

The Intersil Corporation,has designed a series of SECOND

GENERATION hardened power MOSFETs of both N-Chan-

nel and P-Channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as

25m

Ω. Total dose hardness is offered at 100K RAD (Si) and

1000K RAD (Si) with neutron hardness ranging from 1E13

for 500V product to 1E14 for 100V product. Dose rate hard-

ness (GAMMA DOT) exists for rates to 1E9 without current

limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to exhibit mini-

mal characteristic changes to total dose (GAMMA) and

also directed to enhance survival to dose rate (GAMMA

DOT) exposure.

Also available at other radiation and screening levels. See us

on

the

web,

Intersil’s

home

page:

http://www.semi.harris.com.

Contact

your

local

Intersil

Sales Office for additional information.

Symbol

Package

TO-205AF

Ordering Information

PART NUMBER

PACKAGE

BRAND

JANSR2N7272

TO-205AF

JANSR2N7272

D

G

S

S

G

D

File Number

4297.2