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JANSR2N7401 Datasheet(PDF) 1 Page - Intersil Corporation

Part # JANSR2N7401
Description  6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

JANSR2N7401 Datasheet(HTML) 1 Page - Intersil Corporation

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4-1
Formerly FSS234R4
JANSR2N7401
6A, 250V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
The Discrete Products Operation of Intersil has developed a
series
of
Radiation
Hardened
MOSFETs
specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.semi.inter-
sil.com. Contact your local Intersil Sales Office for additional
information.
Die Family TA17638.
MIL-PRF-19500/632.
Features
• 6A, 250V, rDS(ON) = 0.600Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up
to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
Package
TO-257AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
JANSR2N7401
TO-257AA
JANSR2N7401
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
G
S
D
August 1998
File Number
4571
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999


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