Electronic Components Datasheet Search |
|
JANSR2N7401 Datasheet(PDF) 1 Page - Intersil Corporation |
|
JANSR2N7401 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 8 page 4-1 Formerly FSS234R4 JANSR2N7401 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environ- ments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numer- ous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc- ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be oper- ated directly from integrated circuits. Also available at other radiation and screening levels. See us on the web, Intersil’ home page: http://www.semi.inter- sil.com. Contact your local Intersil Sales Office for additional information. Die Family TA17638. MIL-PRF-19500/632. Features • 6A, 250V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 4.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol Package TO-257AA Ordering Information PART NUMBER PACKAGE BRAND JANSR2N7401 TO-257AA JANSR2N7401 CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. G S D August 1998 File Number 4571 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 |
Similar Part No. - JANSR2N7401 |
|
Similar Description - JANSR2N7401 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |