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HITJ0204MP Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # HITJ0204MP
Description  ??0V, ??.6A, 280m?뾪ax Silicon P Channel MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HITJ0204MP Datasheet(HTML) 3 Page - Renesas Technology Corp

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HITJ0204MP
Preliminary
R07DS0476EJ0200 Rev.2.00
Page 3 of 6
May 09, 2013
Main Characteristics
–10
–8
–6
–4
–2
0
0
–0.01
–0.1
–1
–10
–100
–0.01
–0.1
–1
–10
–100
–2
–1
–3
–4
–0.0001
–0.001
–0.01
–1
–0.1
0
–0.5
–1
–1.5
–2
–2.5
–3
0
0.2
0.4
0.6
0.8
1
0
50
100
150
0
–1
–2
–3
–4
0–1
–2
–3
–5
–4
0
–0.5
–1
–1.5
–25
0
25
50
75
100 125 150
VDS = –10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
Ta = 25
°C
1 Shot Pulse
100
μs
DC
Operation
VGS = 0 V
Pulse Test
Tc = 25
°C
–2.6 V
–2.0 V
–2.2 V
–2.4 V
–3.2 V
–4.5 V
–7 V
–6 V
–10 V
–3.4 V
–3.6 V
–3.8 V
–4.0 V
–3.0 V
–2.8 V
10
ms
PW
=
100
ms
Tc = 75
°C
–25
°C
25
°C
VDS = –10 V
Pulse Test
ID = –10 mA
–1 mA
–0.1 mA
VDS = –10 V
Pulse Test
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (
°C)
*When using the glass epoxy board (FR-4: 40
× 40 × 1 mm)
Operation in this area
is limited by RDS(on)


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