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RF1K49092 Datasheet(PDF) 3 Page - Intersil Corporation |
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RF1K49092 Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 13 page 9-5 P-Channel Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 34) -12 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 33) -1 - -2 V Zero Gate Voltage Drain Current IDSS VDS = -12V, VGS = 0V TA = 25 oC- - -1 µA TA = 150 oC - - -50 µA Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 2.5A, VGS = -5V - - 0.130 Ω Turn-On Time tON VDD = -6V, ID ≈ 2.5A, RL = 2.40Ω, VGS = -5V, RGS = 25Ω (Figure 31) - - 115 ns Turn-On Delay Time td(ON) -25- ns Rise Time tr -65- ns Turn-Off Delay Time td(OFF) -40- ns Fall Time tf -45- ns Turn-Off Time tOFF - - 110 ns Total Gate Charge Qg(TOT) VGS = 0V to -10V VDD = -9.6V, ID = 2.5A, RL = 3.84Ω (Figure 36) -19 24 nC Gate Charge at -5V Qg(-5) VGS = 0V to -5V - 10 14 nC Threshold Gate Charge Qg(TH) VGS = 0V to -1V - 0.8 1.1 nC Input Capacitance CISS VDS = -10V, VGS = 0V, f = 1MHz (Figure 35) - 775 - pF Output Capacitance COSS - 550 - pF Reverse Transfer Capacitance CRSS - 150 - pF Thermal Resistance Junction-to-Ambient RθJA Pulse width = 1s Device mounted on FR-4 material - - 62.5 oC/W P-Channel Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Voltage VSD ISD = -2.5A - - -1.25 V Reverse Recovery Time trr ISD = -2.5A, dISD/dt = -100A/µs- - 55 ns Typical Performance Curves (N-Channel) FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE ( oC) 0.0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 2.0 1.0 0.5 0.0 25 50 75 100 125 150 1.5 3.0 2.5 TA, AMBIENT TEMPERATURE ( oC) 4.0 3.5 RF1K49092 |
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