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S1A Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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S1A Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FE ATURES • For surface mounted applications • High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers • Glass passivated junction • Built-in strain relief • Easy pick and place • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Complete device submersible temperature of 260 for 10 seconds in solder bath • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHAN IC AL D ATA • Case: JEDEC DO-214AA molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 12mm tape (EIA-481) M AXIMUM R ATI NGS AND ELECTRICAL CH AR ACTERISTI CS Ratings at 25 Jambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS S1A S1B S1D S1G S1J S1K S1M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Current at TL = 100 I(AV) 1.0 Amps Peak Forward Surge Current 8.3ms single half sine wave superimposed on rated load(JEDEC method) IFSM 30.0 Amps Maximum Instantaneous Forward Voltage at 1.0A VF 1.10 Volts Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=125 I R 5.0 50 uA Maximum Reverse Recovery Time (Note 1) TRR 2.5 S Typical Junction capacitance (Note 2) CJ 12 PF Typical Thermal Resistance (Note 3) R 30.0 /W Operating and Storage Temperature Range TJ,TSTG -55 to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied Vr=4.0 volts 3. 8.0mm2 (.013mm thick) land areas .083(2.11 ) .075(1.91) .012(.305 ) .006(.152) .012(.31) .006(.15) .008(.203) .002(.051 ) .050(1.27 ) .030(0.76 ) SMB/DO-214AA Unit:inch(mm) .155 (3.94 ) .130(3.30 ) .185(4.70) .160(4.06 ) .096 (2.44 ) .083 (2.13) .220 (5.59 ) .200(5.08 ) θ JL http://www.yeashin.com 1 REV.03 20150105 DATA SHEET S1A THRU S1M SEMICONDUCTOR °C °C °C °C °C °C u °C |
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