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RQJ0603LGDQA Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RQJ0603LGDQA
Description  Silicon P Channel MOS FET Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0603LGDQA Datasheet(HTML) 4 Page - Renesas Technology Corp

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RQJ0603LGDQA
Preliminary
R07DS0300EJ0600 Rev.6.00
Page 4 of 7
Jan 10, 2014
0
–0.1
–0.2
–0.3
–0.4
0
–4
–8
–12
–16
–20
0.01
0.03
0.1
0.3
1.0
–0.1
–1.0
–0.3
–3
–10
–25
0
25
50
75
100 125 150
–0.2 A
–25
0
25
50
75
100
125
150
–0.2 A
0.1
1
10
–0.1
–1.0
–25
°C
Tc = 75
°C
–1
–10
–100
–1000
–25
0
25
50
75
100
125 150
100
200
300
400
–0.5 A
ID = –1.0 A
ID = –1.0 A
Pulse Test
VGS = –4.5 V
200
100
300
Pulse Test
VGS = –10 V
–0.5 A
–0.2 A
–0.5 A
ID = –1 A
Pulse Test
Tc = 25
°C
25
°C
–0.3
–0.5
–10 V
Pulse Test
Tc = 25
°C
VGS = –4.5 V
Pulse Test
VGS = 0 V
VDS = –60 V
Pulse Test
VDS = –10 V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (
°C)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Zero Gate Voltage Drain current vs.
Case Temperature
Case Temperature Tc (
°C)


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