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RFP50N06LE Datasheet(PDF) 2 Page - Intersil Corporation |
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RFP50N06LE Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N06LE, RFP50N06LE, RF1S50N06LESM UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 50 Refer to Peak Current Curve A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 0.95 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, Figure 13 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, Figure 12 1 - 3 V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±10V - - 10 µA Drain to Source On Resistance (Note 2) rDS(ON) ID = 50A, VGS = 5V, Figure 11 - - 0.022 Ω Turn-On Time tON VDD = 30V, ID = 50A, RL = 0.6Ω, VGS = 5V, RGS = 2.5Ω Figures 10, 18, 19 - - 230 ns Turn-On Delay Time td(ON) -20- ns Rise Time tr - 170 - ns Turn-Off Delay Time td(OFF) -48- ns Fall Time tf -90- ns Turn-Off Time tOFF - - 165 ns Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 48V, ID = 50A, RL = 0.96Ω Figures 21, 21 - 96 120 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 57 70 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 2.2 2.7 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz Figure 14 - 2100 - pF Output Capacitance COSS - 600 - pF Reverse Transfer Capacitance CRSS - 230 - pF Thermal Resistance Junction to Case RθJC - - 1.05 oC/W Thermal Resistance Junction to Ambient RθJA TO-247 - - 30 oC/W TO-220AB and TO-263AB - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 45A - - 1.5 V Diode Reverse Recovery Time trr ISD = 45A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). RFG50N06LE, RFP50N06LE, RF1S50N06LESM |
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