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XBS104V Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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XBS104V Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Diodes Schottky Barrier Diodes XBS104V ■ Features ● Forward Voltage : VF=0.365V (TYP.) ● Forward Current : IF(AV)=1A ● Repetitive Peak Reverse Voltage : VRM=40V Unit: mm SOD-123 3.7 +0.1 -0.1 2.7 +0.1 -0.1 0.1max 0.50 0.35 1.1 +0.05 -0.05 PIN 1. CATHODE 2. ANODE 1 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Non-Repetitive Peak reverse voltage VRM 40 DC Blocking Voltage VR 40 DC Forward Current IF(AV) 1 Peak forward surge current (Note.1) IFSM 20 Junction Temperature TJ 125 Storage temperature range Tstg -55 to 150 ℃ A V Note.1:Non continuous high amplitude 60Hz half-sine wave. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VRM IR= 100 uA 40 V IF= 100m A 230 315 IF= 500mA 300 385 IF= 1 A 365 410 Reverse voltage leakage current IR VR= 40 V 0.25 2 mA Junction capacitance Cj VR= 1V, f= 1 MHz 150 pF Reverse Recovery Time (Note.2) trr IF=IR=10mA , irr=1mA 41 ns VF Forward voltage mV Note.2: trr measurement circuit. Pulse Generatrix Bias Device Under test Oscilloscope ■ Marking Marking SL |
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