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RFL2N06 Datasheet(PDF) 2 Page - Intersil Corporation |
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RFL2N06 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 5 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFL2N05 RLF2N06 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 60 V Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR 50 60 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 22 A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 10 10 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 8.33 8.33 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/ oC Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 RFL2N05 50 - - V RFL2N06 60 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS, TC = 25 oC -- 1 µA TC = 125 oC- - 25 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source On Voltage (Note 2) VDS(ON) ID = 1A, VGS = 10V - - 0.95 V ID = 2A, VGS = 10V - - 2.0 V ID = 4A, VGS = 15V - - 4.8 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 1A, VGS = 10V, (Figures 6, 7) - - 0.95 Ω Forward Transconductance (Note 2) gfs ID = 1A, VDS = 10V, (Figure 10) 400 - - S Turn-On Delay Time td(ON) ID ≈ 1A, VDD = 30V, RGS = 50Ω, VGS = 10V, (Figures 11, 12, 13) - 6 15 ns Rise Time tr -14 30 ns Turn-Off Delay Time td(OFF) -16 30 ns Fall Time tf -30 50 ns Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 200 pF Output Capacitance COSS - - 85 pF Reverse-Transfer Capacitance CRSS - - 30 pF Thermal Resistance Junction to Case R θJC -- 15 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 1A - - 1.4 V Diode Reverse Recovery Time trr ISD = 2A, dISD/dt = 50A/µs - 100 - ns NOTE: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. RFL2N05, RFL2N06 |
Similar Part No. - RFL2N06 |
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Similar Description - RFL2N06 |
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