RFL2N06 datasheet(2/5 Pages) INTERSIL

Part #	RFL2N06

Description	2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFL2N05

RLF2N06

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

50

60

V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR

50

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

22

A

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

10

A

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

8.33

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.0667

W/ oC

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of

the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0

RFL2N05

50

-

V

RFL2N06

60

-

V

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)

2

-

4

V

Zero-Gate Voltage Drain Current

IDSS

VDS = 0.8 x Rated BVDSS,

TC = 25

oC

--

1

µA

TC = 125

oC-

-

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0

-

±100

nA

Drain to Source On Voltage (Note 2)

VDS(ON) ID = 1A, VGS = 10V

-

0.95

V

ID = 2A, VGS = 10V

-

2.0

V

ID = 4A, VGS = 15V

-

4.8

V

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 1A, VGS = 10V, (Figures 6, 7)

-

0.95

Ω

Forward Transconductance (Note 2)

gfs

ID = 1A, VDS = 10V, (Figure 10)

400

-

S

Turn-On Delay Time

td(ON)

ID ≈ 1A, VDD = 30V, RGS = 50Ω,

VGS = 10V, (Figures 11, 12, 13)

-

6

15

ns

Rise Time

tr

-14

30

ns

Turn-Off Delay Time

td(OFF)

-16

30

ns

Fall Time

tf

-30

50

ns

Input Capacitance

CISS

VGS = 0V, VDS = 25V,

f = 1MHz, (Figure 9)

-

200

pF

Output Capacitance

COSS

-

85

pF

Reverse-Transfer Capacitance

CRSS

-

30

pF

Thermal Resistance Junction to Case

R

θJC

--

15

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 1A

-

1.4

V

Diode Reverse Recovery Time

trr

ISD = 2A, dISD/dt = 50A/µs

-

100

-

ns

NOTE:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

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