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RJH60D0DPK Datasheet(PDF) 6 Page - Renesas Technology Corp |
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RJH60D0DPK Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page RJH60D0DPK Preliminary R07DS0155EJ0400 Rev.4.00 Page 6 of 9 Apr 19, 2012 8 4 16 12 Diode Current Slope diF/dt (A/ μs) Reverse Recovery Time vs. Diode Current Slope (Typical) Diode Current Slope diF/dt (A/ μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Diode Current Slope diF/dt (A/ μs) Reverse Recovery Charge vs. Diode Current Slope (Typical) C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) 0 80 60 40 20 0123 4 Tc = 25°C 150°C VCE = 0 V Pulse Test 1 10 100 1000 10000 Gate Charge Qg (nc) Dynamic Input Characteristics (Typical) Typical Capacitance vs. Collector to Emitter Voltage 800 600 400 200 0 0 16 12 8 4 0 10 20 30 40 50 VGE VCE Collector to Emitter Voltage VCE (V) IC = 22 A VCC = 300 V Tc = 25°C VGE = 0 V f = 1 MHz Tj = 25°C Cies Coes Cres 100 50 300 250 200 150 0 040 80 200 120 160 040 80 200 120 160 040 80 200 120 160 0.4 0.2 1.0 0.8 0.6 VCC = 300 V IF = 22 A 0 VCC = 300 V IF = 22 A Tc = 150°C 25°C 0 VCC = 300 V IF = 22 A Tc = 150°C 25°C Tc = 150°C 25°C 0100 50 150 200 250 300 |
Similar Part No. - RJH60D0DPK_15 |
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Similar Description - RJH60D0DPK_15 |
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