RF1S45N02L datasheet(4/8 Pages) INTERSIL

Part #	RF1S45N02L

Description	45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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4

RFP45N02L, RF1S45N02L, RF1S45N02LSM

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs

GATE VOLTAGE AND DRAIN CURRENT

FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE

RESISTANCE

FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

0.01

0.1

10

0.001

200

1

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25

oC

STARTING TJ = 150

oC

100

1

100

0

25

0

1

23

5

50

75

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 10V

100

4

VGS = 3V

VGS = 5V

VGS = 4.5V

VGS = 3.5V

PULSE DURATION = 250

µs, TC = 25oC

0

3.0

4.5

6.0

7.5

1.5

0

25

50

75

175oC

PULSE TEST

PULSE DURATION = 250

µs

DUTY CYCLE = 0.5% MAX

VGS, GATE TO SOURCE VOLTAGE (V)

100

-55oC

25oC

VDD = 15V

0

25

50

75

3.0

3.5

4.0

4.5

VGS, GATE TO SOURCE VOLTAGE (V)

5.0

100

ID = 2A

ID = 30A

ID = 15A

ID = 45A

2.5

PULSE DURATION = 250

µs

0

150

200

250

300

010

20

30

40

RGS, GATE TO SOURCE RESISTANCE (Ω)

50

350

100

50

tr

tf

td(OFF)

td(ON)

VDD = 15V, ID = 45A, RL = 0.333Ω

0

0.5

1.0

1.5

2.0

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (

oC)

200

PULSE DURATION = 250

µs, VGS = 5V, ID = 45A

RFP45N02L, RF1S45N02L, RF1S45N02LSM

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