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RJH60M3DPP-M0 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # RJH60M3DPP-M0
Description  600V - 17A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60M3DPP-M0 Datasheet(HTML) 6 Page - Renesas Technology Corp

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RJH60M3DPP-M0
Preliminary
R07DS0532EJ0300 Rev.3.00
Page 6 of 9
May 25, 2012
010
30
20
70
40
60
50
20
10
50
40
30
0
Gate Charge Qg (nc)
Diode Current Slope di/dt (A/
μs)
Dynamic Input Characteristics (Typical)
800
600
400
200
0
16
12
8
4
0
VCC = 300 V
IC = 17 A
Tc = 25°C
VGE
VCE
Typical Capacitance vs.
Collector to Emitter Voltage
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Collector to Emitter Voltage VCE (V)
80
40
200
160
120
0
0
40
80200
120
1600
40
80200
120
160
VCC = 300 V
IF = 17 A
Tc = 150°C
25°C
Diode Current Slope di/dt (A/
μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di/dt (A/
μs)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.2
0.1
0.5
0.4
0.3
0
VCC = 300 V
IF = 17 A
Tc = 150°C
25°C
8
4
16
12
0
0
40
80200
120
160
VCC = 300 V
IF = 17 A
Tc = 150°C
25°C
25°C
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
00.4
0.8
1.21.6
2.0
2.4
VGE = 0 V
Pulse Test
Tc = 150°C
1
10
100
1000
1000
0100
50150
200
250
300
Cies
Coes
Cres
VGE = 0 V
f = 1 MHz
Tc = 25°C


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