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RJK6015DPM Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJK6015DPM Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page RJK6015DPM Preliminary R07DS0438EJ0200 Rev.2.00 Page 2 of 6 Jun 21, 2012 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 A VDS = 600 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 A VGS = 30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.315 0.360 ID = 10.5 A, VGS = 10 V Note5 Input capacitance Ciss — 2600 — pF Output capacitance Coss — 240 — pF Reverse transfer capacitance Crss — 28 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 40 — ns Rise time tr — 45 — ns Turn-off delay time td(off) — 107 — ns Fall time tf — 40 — ns ID = 10.5 A VGS = 10 V RL = 28.6 Rg = 10 Total gate charge Qg — 67 — nC Gate to source charge Qgs — 13 — nC Gate to drain charge Qgd — 29 — nC VDD = 480 V VGS = 10 V ID = 21 A Body-drain diode forward voltage VDF — 0.89 1.50 V IF = 21 A, VGS = 0 Note5 Body-drain diode reverse recovery time trr — 430 — ns IF = 21 A, VGS = 0 diF/dt = 100 A/s Notes: 5. Pulse test |
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