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RJH60V1BDPP-M0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJH60V1BDPP-M0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 10 page  R07DS0759EJ0100 Rev.1.00 Page 1 of 9 May 25, 2011 Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 2 3 1. Gate 2. Collector 3. Emitter C G E Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage VGES ±30 V Tc = 25°C IC 16 A Collector current Tc = 100°C IC 8 A Collector peak current ic(peak) Note1 32 A Collector to emitter diode forward current iDF 8 A Collector to emitter diode forward peak current iD(peak) Note1 32 A Collector dissipation PC Note2 30 W Junction to case thermal resistance (IGBT) j-c Note2 4.1 °C/ W Junction to case thermal resistance (Diode) j-cd Note2 2.5 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C R07DS0759EJ0100 Rev.1.00 May 25, 2011 |
Similar Part No. - RJH60V1BDPP-M0_15 |
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