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RJP60F5DPK Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJP60F5DPK Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJP60F5DPK Preliminary R07DS0757EJ0100Rev.1.00 Page 3 of 6 May 31, 2012 Main Characteristics Typical Output Characteristics 160 120 80 40 123 45 0 0 Collector to Emitter Voltage VCE (V) 160 120 80 40 0 Pulse Test Ta = 25°C Pulse Test Ta = 25°C 9 V V GE = 8 V 8.5 V 9.5 V 10.5 V 15 V 13 V 10 V 11 V Typical Transfer Characteristics 2 468 10 12 VCE = 10 V Pulse Test Gate to Emitter Voltage VGE (V) 25°C –25 °C Tc = 75 °C Collector to Emitter Voltage VCE (V) Maximum Safe Operation Area 1000 100 1 10 0.1 1 100 10 1000 Tc = 25 °C Single pulse PW = 10 μs 1.0 2.2 1.8 1.4 2.6 3.0 68 10 12 14 16 20 18 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) IC = 20 A 40 A 80 A Ta = 25°C Pulse Test Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 −25 02575 125 50 100 150 VGE = 15 V Pulse Test Junction Temparature Tj (°C) 40 A 20 A IC = 80 A 0 6 4 2 8 10 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) −25 02575 125 50 100 150 VCE = 10 V Pulse Test Junction Temparature Tj (°C) 1 mA IC = 10 mA |
Similar Part No. - RJP60F5DPK_15 |
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Similar Description - RJP60F5DPK_15 |
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