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IRFR18N15D Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFR18N15D Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 10 page  IRFR18N15D/IRFU18N15D Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 4.2 ––– ––– S VDS = 50V, ID = 11A Qg Total Gate Charge ––– 28 43 ID = 11A Qgs Gate-to-Source Charge ––– 7.6 11 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 14 21 VGS = 10V, td(on) Turn-On Delay Time ––– 8.8 ––– VDD = 75V tr Rise Time ––– 25 ––– ID = 11A td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.8Ω tf Fall Time ––– 9.8 ––– VGS = 10V Ciss Input Capacitance ––– 900 ––– VGS = 0V Coss Output Capacitance ––– 190 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 49 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1160 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 88 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 95 ––– VGS = 0V, VDS = 0V to 120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 200 mJ IAR Avalanche Current ––– 11 A EAR Repetitive Avalanche Energy ––– 11 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 11A Qrr Reverse RecoveryCharge ––– 660 980 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 18 72 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.125 Ω VGS = 10V, ID = 11A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance 2014-8-19 2 www.kersemi.com |
Similar Part No. - IRFR18N15D_15 |
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Similar Description - IRFR18N15D_15 |
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