IRF1010N datasheet(4/8 Pages) IRF

Part #	IRF1010N

Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

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Manufacturer	IRF [International Rectifier]

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IRF1010N

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

20

40

60

80

100

120

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

43A

V

= 11V

DS

V

= 27V

DS

V

= 44V

DS

0.1

1

10

100

1000

0.0

0.6

1.2

1.8

2.4

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

1

10

100

VDS, Drain-to-Source Voltage (V)

0

1000

2000

3000

4000

5000

6000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

1

10

100

1000

VDS , Drain-toSource Voltage (V)

1

10

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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IRF1010N Datasheet(PDF) 4 Page - International Rectifier

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