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2SA812 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SA812 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 6 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET Document No. D17119EJ4V0DS00 (4th edition) Date Published November 2005 NS CP(K) Printed in Japan c 1984 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.0 V Collector Current (DC) IC −100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cut-off Current ICBO −0.1 μA VCB = −60 V, IE = 0 A Emitter Cut-off Current IEBO −0.1 μA VEB = −5.0 V, IC = 0 A DC Current Gain hFE 90 200 600 VCE = −6.0 V, IC = −1.0 mA Note Collector Saturation Voltage VCE(sat) −0.18 −0.3 V IC = −100 mA, IB = −10 mA Base to Emitter Voltage VBE −0.58 −0.62 −0.68 V VCE = 6.0 V, IC = −1.0 mA Gain Bandwidth Product fT 180 MHz VCE = −6.0 V, IE = 10 mA Output Capacitance Cob 4.5 pF VCB = −10 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% hFE CLASSIFICATION Marking M4 M5 M6 M7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 PACKAGE DRAWING (Unit: mm) 2.8 ± 0.2 1.5 TYP. 0.65 +0.1 –0.15 2 1 3 Marking 1. Emitter 2. Base 3. Collector <R> <R> |
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