2SA812_15 datasheet(3/6 Pages) RENESAS

Part #	2SA812

Description	PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

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Manufacturer	RENESAS [Renesas Technology Corp]

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SILICON TRANSISTOR

2SA812

PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

DATA SHEET

Document No. D17119EJ4V0DS00 (4th edition)

Date Published November 2005 NS CP(K)

Printed in Japan

c

1984

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Complementary to 2SC1623

• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA)

• High Voltage: VCEO = −50 V

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

−60

V

Collector to Emitter Voltage

VCEO

−50

V

Emitter to Base Voltage

VEBO

−5.0

V

Collector Current (DC)

IC

−100

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cut-off Current

ICBO

−0.1

μA

VCB =

−60 V, IE = 0 A

Emitter Cut-off Current

IEBO

−0.1

μA

VEB =

−5.0 V, IC = 0 A

DC Current Gain

hFE

90

200

600

VCE =

−6.0 V, IC = −1.0 mA

Note

Collector Saturation Voltage

VCE(sat)

−0.18

−0.3

V

IC =

−100 mA, IB = −10 mA

Base to Emitter Voltage

VBE

−0.58

−0.62

−0.68

V

VCE = 6.0 V, IC =

−1.0 mA

Gain Bandwidth Product

fT

180

MHz

VCE =

−6.0 V, IE = 10 mA

Output Capacitance

Cob

4.5

pF

VCB =

−10 V, IE = 0 A, f = 1.0 MHz

Note Pulsed: PW

≤ 350

μs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

Marking

M4

M5

M6

M7

hFE

90 to 180

135 to 270

200 to 400

300 to 600

PACKAGE DRAWING (Unit: mm)

2.8 ± 0.2

1.5 TYP.

0.65

+0.1

–0.15

2

1

3

Marking

1. Emitter

2. Base

3. Collector

<R>

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