JANTXV2N6768 datasheet(1/7 Pages) IRF

Part #	JANTXV2N6768

Description	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

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Manufacturer	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

1 4

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

9.0

IDM

Pulsed Drain Current ➀

56

PD @ TC = 25°C

Max. Power Dissipation

15 0

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

11.3

mJ

IAR

Avalanche Current ➀

14

A

EAR

Repetitive Avalanche Energy ➀

15

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5 (typical)

g

PD - 90339F

o C

A

01/22/01

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF350

400V

0.300

Ω

14A

For footnotes refer to the last page

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6768

HEXFET



TRANSISTORS

JANTXV2N6768

THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/543]

IRF350

400V, N-CHANNEL

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

TO-3

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

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