S9013T_15 datasheet(1/2 Pages) SECOS

Part #	S9013T

Description	NPN Epitaxial Silicon Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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S9013T

NPN Epitaxial Silicon Transistor

TO-92

FEATURE

Power dissipation

PCM :

0.625

W

Tamb=

25 C

+150 C

Collector current

ICM:

0.5

A

Collector-base voltage

V(BR)CBO : 40

V

Operating and storage junction temperature range

Tj, Tstg:

-55

to

ELECTRICAL

CHARACTERISTICS

Tamb=25

unless

otherwise

specified

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

A

IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1 mA ,

IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100

A

IC=0

5

V

Collector cut-off current

ICBO

VCB= 40V ,

IE=0

0.1

A

Collector cut-off current

ICEO

VCE=20V ,

IE=0

0.1

A

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

A

hFE(1)

VCE=1V, IC=50mA

64

300

DC current gain

hFE(2)

VCE=1V, IC= 500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC= 500 mA, IB= 50mA

0.6

V

Base-emitter voltage

VBE(sat)

IC= 500 mA, IB= 50mA

1.2

V

Transition frequency

f T

VCE=6V,IC=20mA,

f=30MHz

150

MHz

CLASSIFICATION OF hFE(1)

Rank

D

E

F

G

H

I

Range

64-91

78-112

96-135

112-166

144-202

190-300

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46

+0.1

–0.1

0.43

+0.08

–0.07

13

2

1: Emitter

2: Base

3: Collector

1.25–0.2

+0.2

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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