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N0300N Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # N0300N
Description  MOS FIELD EFFECT TRANSISTOR
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0300N Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet D19781EJ1V0DS
5
N0300N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
20
40
60
80
100
120
-50 -25
0
25 50 75 100 125 150 175
VGS = 4.5 V
ID = 2.0 A
Pulsed
10 V
Tch - Channel Temperature -
°C
10
100
1000
0.01
0.1
1
10
100
Ciss
VGS = 0 V
f = 1.0 MHz
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
0.1
1
10
100
tf
tr
td(on)
td(off)
VDD = 15 V
VGS = 10 V
RG = 6
Ω
ID - Drain Current - A
0
5
10
15
20
25
01
23
456
7
0
2
4
6
8
10
VDS
VGS
ID = 4.5 A
VDD = 24 V
15 V
6 V
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.0001
0.001
0.01
0.1
1
10
100
0
0.5
1
1.5
VGS = 0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V


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