IRF5EA1310 datasheet(1/7 Pages) IRF

Part #	IRF5EA1310

Description	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)

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Manufacturer	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

23

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

15

IDM

Pulsed Drain Current

92

PD @ TC = 25°C

Max. Power Dissipation

38

W

Linear Derating Factor

0.3

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

73

mJ

IAR

Avalanche Current

22

A

EAR

Repetitive Avalanche Energy

3.8

mJ

dv/dt

Peak Diode Recovery dv/dt

3.6

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 s)

Weight

0.89

g

Fifth Generation HEXFET®

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

oC

A

HEXFET® POWER MOSFET

IRF5EA1310

SURFACE MOUNT (LCC-28)

1019/00

www.irf.com

1

100V, N-CHANNEL

LCC-28

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF5EA1310

100V

0.036

Ω

23A

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Light Weight

For footnotes refer to the last page

PD-93977

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IRF5EA1310 Datasheet(PDF) 1 Page - International Rectifier

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