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IRF5EA1310 Datasheet(PDF) 1 Page - International Rectifier |
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IRF5EA1310 Datasheet(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 23 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 15 IDM Pulsed Drain Current 92 PD @ TC = 25°C Max. Power Dissipation 38 W Linear Derating Factor 0.3 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 73 mJ IAR Avalanche Current 22 A EAR Repetitive Avalanche Energy 3.8 mJ dv/dt Peak Diode Recovery dv/dt 3.6 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 s) Weight 0.89 g Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. oC A HEXFET® POWER MOSFET IRF5EA1310 SURFACE MOUNT (LCC-28) 1019/00 www.irf.com 1 100V, N-CHANNEL LCC-28 Product Summary Part Number BVDSS RDS(on) ID IRF5EA1310 100V 0.036 Ω 23A Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight For footnotes refer to the last page PD-93977 |
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