Electronic Components Datasheet Search |
|
NP50P04KDG-E1-AYNote Datasheet(PDF) 7 Page - Renesas Technology Corp |
|
NP50P04KDG-E1-AYNote Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 9 page Data Sheet D18688EJ3V0DS 5 NP50P04KDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 5 10 15 20 -75 -25 25 75 125 175 225 ID = −25 A Pulsed −10 V VGS = −4.5 V Tch - Channel Temperature - °C 10 100 1000 10000 -0.1 -1 -10 -100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 -0.1 -1 -10 -100 tr td(on) tf VDD = −20 V VGS = −10 V RG = 0 Ω td(off) ID - Drain Current - A 0 -10 -20 -30 -40 0 20406080 100 120 0 -3 -6 -9 -12 VDS ID = −50 A VGS VDD = −32 V −20 V − 8 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -0.01 -0.1 -1 -10 -100 -1000 00.5 11.5 VGS = −10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V 1 10 100 1000 -0.1 -1 -10 -100 di/dt = −100 A/μs VGS = 0 V IF - Diode Forward Current - A |
Similar Part No. - NP50P04KDG-E1-AYNote |
|
Similar Description - NP50P04KDG-E1-AYNote |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |