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KSM70N08 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KSM70N08 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  KSM70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V • Low gate charge ( typical 75 nC) • Low Crss ( typical 180 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSM70N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 70 A - Continuous (TC = 100°C) 49.5 A IDM Drain Current - Pulsed (Note 1) 280 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 1150 mJ IAR Avalanche Current (Note 1) 70 A EAR Repetitive Avalanche Energy (Note 1) 15.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns PD Power Dissipation (TC = 25°C) 155 W - Derate above 25°C 1.03 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.97 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220 2014-6-29 1 www.kersemi.com |
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