NP82N04NUG-S18-AYNote datasheet(3/10 Pages) RENESAS

Part #	NP82N04NUG-S18-AYNote

Description	SWITCHING N-CHANNEL POWER MOS FET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

3 / 10 page

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D19803EJ1V0DS00 (1st edition)

Date Published May 2009 NS

Printed in Japan

2009

MOS FIELD EFFECT TRANSISTOR

NP82N04MUG, NP82N04NUG

(TO-220)

(TO-262)

DESCRIPTION

The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current

switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP82N04MUG-S18-AY

Note

TO-220 (MP-25K) typ. 1.9 g

NP82N04NUG-S18-AY

Note

Pure Sn (Tin)

Tube

50 p/tube

TO-262 (MP-25SK) typ. 1.8 g

Note Pb-free (This product does not contain Pb in the external electrode.)

FEATURES

• Non logic level

• Super low on-state resistance

RDS(on) = 4.2 m

Ω MAX. (VGS = 10 V, ID = 41 A)

• High current rating

ID(DC) =

±82 A

• Low input capacitance

Ciss = 6500 pF TYP.

• Designed for automotive application and AEC-Q101 qualified

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±82

A

Drain Current (pulse)

Note1

ID(pulse)

±328

A

Total Power Dissipation (TC = 25

°C)

PT1

143

W

Total Power Dissipation (TA = 25

°C)

PT2

1.8

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Repetitive Avalanche Current

Note2

IAR

43

A

Repetitive Avalanche Energy

Note2

EAR

185

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Tch

≤ 150°C, RG = 25 Ω

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

1.05

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

83.3

°C/W

Similar Part No. - NP82N04NUG-S18-AYNote

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NP82N04NUG-S18-AY	322Kb / 10P	MOS FIELD EFFECT TRANSISTOR

More results

Similar Description - NP82N04NUG-S18-AYNote

Manufacturer	Part #	Datasheet	Description
NEC	2SK4078	184Kb / 8P	SWITCHING N-CHANNEL POWER MOS FET
	2SK4092	198Kb / 8P	SWITCHING N-CHANNEL POWER MOS FET
	2SK3116	70Kb / 8P	SWITCHING N-CHANNEL POWER MOS FET
Renesas Technology Corp	2SK3943	265Kb / 10P	SWITCHING N-CHANNEL POWER MOS FET
	NP80N04MLG	356Kb / 12P	SWITCHING N-CHANNEL POWER MOS FET
	NP82N06PLG	313Kb / 10P	SWITCHING N-CHANNEL POWER MOS FET
	NP90N06VLG	337Kb / 10P	SWITCHING N-CHANNEL POWER MOS FET
	NP60N055KUG	269Kb / 9P	SWITCHING N-CHANNEL POWER MOS FET
	NP90N04PUF	274Kb / 9P	SWITCHING N-CHANNEL POWER MOS FET
	2SK3793	306Kb / 10P	SWITCHING N-CHANNEL POWER MOS FET
	2SK3811	274Kb / 10P	SWITCHING N-CHANNEL POWER MOS FET

More results

NP82N04NUG-S18-AYNote Datasheet(PDF) 3 Page - Renesas Technology Corp

NP82N04NUG-S18-AYNote Datasheet(HTML) 3 Page - Renesas Technology Corp

Similar Part No. - NP82N04NUG-S18-AYNote

Similar Description - NP82N04NUG-S18-AYNote

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL