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NP82N06PLG-E1-AYNote Datasheet(PDF) 8 Page - Renesas Technology Corp |
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NP82N06PLG-E1-AYNote Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 10 page Data Sheet D18777EJ1V0DS 6 NP82N06PLG PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZP) No plating 7.88 MIN. 2.54 0.75 ±0.2 0.5 2 13 4 4.45 ±0.2 1.3 ±0.2 0.6 ±0.2 0 to 8˚ 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.025 to 0.25 0.25 10.0 ±0.3 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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