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NP88N04NUG Datasheet(PDF) 3 Page - Renesas Technology Corp |
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NP88N04NUG Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP88N04NUG SWITCHING N-CHANNEL POWER MOSFET DATA SHEET Document No. D17400EJ1V0DS00 (1st edition) Date Published November 2005 NS CP(K) Printed in Japan 2005 DESCRIPTION The NP88N04NUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 3.4 m Ω MAX. (VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 9510 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±88 A Drain Current (pulse) Note1 ID(pulse) ±352 A Total Power Dissipation PT1 1.8 W Total Power Dissipation (TC = 25 °C) PT2 200 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 56 A Repetitive Avalanche Energy Note2 EAR 314 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.75 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W ORDERING INFORMATION PART NUMBER PACKAGE NP88N04NUG TO-262 (TO-262) |
Similar Part No. - NP88N04NUG_15 |
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Similar Description - NP88N04NUG_15 |
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