Data Sheet D14675EJ4V0DS

3

NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

Gate Leakage Current

±100

nA

Gate to Source Threshold Voltage

2.0

3.0

4.0

V

Forward Transfer Admittance

21

43

S

Drain to Source On-state Resistance

9.3

12.5

m

Ω

Input Capacitance

5600

8400

pF

Output Capacitance

530

800

pF

Reverse Transfer Capacitance

f = 1 MHz

270

490

pF

Turn-on Delay Time

30

66

ns

Rise Time

21

53

ns

Turn-off Delay Time

Ω

72

150

ns

Fall Time

12

30

ns

Total Gate Charge

100

150

nC

Gate to Source Charge

24

nC

Gate to Drain Charge

35

nC

Body Diode Forward Voltage

1.0

V

Reverse Recovery Time

70

ns

Reverse Recovery Charge

di/dt = 100 A/

200

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

Ω

50

Ω

PG.

L

→ 0 V

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

0

D.U.T.

τ = 1 s

μ

Duty Cycle

≤ 1%

Wave Form

Wave Form

10%

90%

10%

0

90%

90%

10%

τ

0

PG.

50

Ω

D.U.T.