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NP90N04VUG Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # NP90N04VUG
Description  SWITCHING N-CHANNEL POWER MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP90N04VUG Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D19545EJ1V0DS
2
NP90N04VUG
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
2.0
3.0
4.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 5 V, ID = 45 A
25
51
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 45 A
3.2
4.0
m
Ω
Input Capacitance
Ciss
VDS = 25 V,
5000
7500
pF
Output Capacitance
Coss
VGS = 0 V,
480
720
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
310
560
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 45 A,
32
64
ns
Rise Time
tr
VGS = 10 V,
20
49
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
65
130
ns
Fall Time
tf
11
27
ns
Total Gate Charge
QG
VDD = 32 V,
90
135
nC
Gate to Source Charge
QGS
VGS = 10 V,
24
nC
Gate to Drain Charge
QGD
ID = 90 A
31
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 90 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 90 A, VGS = 0 V,
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
48
nC
Note Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%
μ


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