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NP100P04PDG-E1-AYNote Datasheet(PDF) 7 Page - Renesas Technology Corp |
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NP100P04PDG-E1-AYNote Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 9 page  Data Sheet D18692EJ3V0DS 5 NP100P04PDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 2 4 6 8 -75 -25 25 75 125 175 225 ID = −50 A Pulsed −10 V VGS = −4.5 V Tch - Channel Temperature - °C 100 1000 10000 100000 -0.1 -1 -10 -100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 10000 -0.1 -1 -10 -100 -1000 tr td(off) td(on) tf VDD = −20 V VGS = −10 V RG = 0 Ω ID - Drain Current - A 0 -10 -20 -30 -40 0 50 100 150 200 250 300 350 0 -3 -6 -9 -12 VDS VGS ID = −100 A VDD = −32 V −20 V −8 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -0.01 -0.1 -1 -10 -100 -1000 00.5 11.5 VGS = −10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V 1 10 100 1000 -0.1 -1 -10 -100 di/dt = −100 A/μs VGS = 0 V IF - Diode Forward Current - A |
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