Parameter

Max.

Units

8.0

5.6

A

Pulsed Drain Current



32

Power Dissipation

88

W

Power Dissipation

…

3.8

Linear Derating Factor

0.59

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

110

mJ

Avalanche Current



4.8

A

Repetitive Avalanche Energy



8.8

mJ

dv/dt

Peak Diode Recovery dv/dt

7.3

V/ns

Operating Junction and

-55 to +175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

„

10 lbf•in (1.1N•m)

9/10/01

Absolute Maximum Ratings

Description

S

D

G

IRF634NS

TO-220AB

IRF634N

TO-262

IRF634NL

IRF634N

IRF634NS

IRF634NL

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-

industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF634NL) is available for low-

profile application.

www.irf.com

1

PD - 94310