IRF7401 datasheet(1/9 Pages) IRF

Part #	IRF7401

Description	Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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HEXFET® Power MOSFET

PD - 9.1244C

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7401

SO -8

VDSS = 20V

RDS(on) = 0.022Ω

Parameter

Max.

Units

ID @ TA = 25°C

10 Sec. Pulsed Drain Current, VGS @ 4.5V

10

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

8.7

ID @ TA = 70°C

Continuous Drain Current, VGS @ 4.5V

7.0

IDM

Pulsed Drain Current

35

PD @TA = 25°C

Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

To p V ie w

8

1

2

3

4

5

6

7

D

G

S

A

S

A

02/13/01

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

–––

50

°C/W

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