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KSMD17N08 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KSMD17N08 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 8 page 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 28 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSMD17N08 / KSMU17N08 Units VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 12.9 A - Continuous (TC = 100°C) 8.2 A IDM Drain Current - Pulsed (Note 1) 51.6 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ IAR Avalanche Current (Note 1) 12.9 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 40 W - Derate above 25°C 0.32 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 3.13 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G KSMD17N08 / KSMU17N08 TO-252 TO-251 1 2014-7-19 www.kersemi.com |
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