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FYS-18011HXX-22 Datasheet(PDF) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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FYS-18011HXX-22 Datasheet(HTML) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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4 / 5 page  Model No. Rev. Min 5 — — — -40 -40 ■ ■ ■ ■ Electrical-Optical Characteristics ● Color Code & Chip Characteristics:(Test Condition:IF=20mA) Typ H Red 90nm 2.00 S Hi Red 20nm 1.80 D Super Red 20nm 1.90 E Orange 35nm 1.90 A Amber 35nm 1.90 Y Yellow 35nm 1.90 G Green 10nm 1.90 3.40 2.80 2.80 PG Pure Green 36nm 2.80 UHR Ultra Hi Red 20nm 1.90 UR Ultra Red 20nm 1.90 UE Ultra Orange 20nm 1.90 UA Ultra Amber AlGaInP 20nm 1.90 2.50 UY Ultra Yellow AlGaInP 20nm 1.90 2.50 UG Ultra Green AlGaInP 30nm 1.90 2.50 PG Ultra Pure Green InGaN 36nm 2.80 3.80 BG Ultra Bluish Green InGaN 36nm 2.80 3.80 30nm 2.80 30nm 2.80 Note: 1.Luminous Intensity is based on the Foryard standards. 2.Pay attention about static for InGaN Page ： 4/5 FYS-18011G/HXX-XX A Model No. ： ： ： ：FYS-18011G/HXX-XX Standard brightness Forward Voltage(VF) Unit:V 30 ■ ■ ■ ■ Absolute maximum ratings (Ta=25 ℃) (Ta=25 ℃) GaAsP 2.50 2.50 0.7~1(mw) 60~120 AlGaInP 640nm 30~60 430nm 6~12(mw) 60~100 3.80 460nm 520nm ℃ 26~38 13~18 625nm — Max Emitting Color Dice Material GaAsP 2.50 — Reverse Voltage VR IR=30 570nm 470nm GaAsP 2.50 AlGaAs/DH 650nm 2.50 Tstr — +85 Operating Temperature Max Unit Test Condition Peak Wave Length(λP) Spectral Line halfwidth(∆ λ1/2) mA mW AlGaInP 625nm 2.50 2.50 2.50 AlGaInP 30~60~80 260~310 260~310 40~100~150 50~140~190 635nm 590nm 520nm 505nm InGaN 60nm 3.80 3.80 4.40 B Blue InGaN Ultra brightness Http://www.foryard.com Segment-to-Segment Luminous Intensity ratio(Iv-M) 1.5:1 610nm 6~12(mw) 4~6(mw) 470nm 80~90~120 3.80 80~90~120 Ultra Blue InGaN UB 460nm 3.80 GaP Pulse Current Ipeak Duty=0.1mS,1KHz Forward Current IF — Power Dissipation Symbol 100 V — Pd Parameter Value 14~18 570nm 590nm 15~20 14~20 610nm 1 Luminous Intensity (Iv) Unit:mcd AlGaAs/SH 660nm 700nm GaP 2.50 ℃ +85 13~18 mA 150 2.50 Storage Temperature Topr |
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