Parameter

Max.

Units

Drain- Source Voltage

20

V

4.8

3.9

A

Pulsed Drain Current



19

Power Dissipation

ƒ

1.2

Power Dissipation

ƒ

0.76

Linear Derating Factor

9.5

mW/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

05/03/01

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

105

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRF7757

Ω)

Ω)

Ω)

Ω)

20V

4.8A

3.8A

TSSOP-8

Description

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

8 = D

7 = D

6 = D

5 = D

1 = S1

2 = G1

3 = S2

4 = G2

4

3

2

1

5

6

7

8

PD - 94174