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IRF7811W Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7811W
Description  Power MOSFET for DC-DC Converters
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7811W
2
www.irf.com
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward
V
SD
1.25
V
I
S = 15A‚, VGS = 0V
Voltage*
Reverse Recovery
Q
rr
45
nC
di/dt ~ 700A/µs
V
DS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Q
rr(s)
41
nC
di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)
„
V
DS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
Charge
„
Notes:  Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 400 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board
„
Typ = measured - Q
oss
… Typical values of RDS(on) measured at V
GS = 4.5V, QG, QSW and QOSS
measured at V
GS = 5.0V, IF = 15A.
Parameter
Min
Typ
Max
Units
Conditions
Drain-to-Source
BV
DSS
30
V
V
GS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source
R
DS(on)
9.0
12
m
V
GS = 4.5V, ID = 15A‚
on Resistance
Gate Threshold Voltage
V
GS(th)
1.0
V
V
DS = VGS,ID = 250µA
Drain-Source Leakage
I
DSS
30
V
DS
= 24V, V
GS
= 0
Current*
150
µA
V
DS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
I
GSS
±100
nA
V
GS = ±12V
Current
Total Gate Chg Cont FET
Q
G
18
24
V
GS=5.0V,
I
D=15A, VDS=16V
Total Gate Chg Sync FET
Q
G
15.6
V
GS = 5V, VDS< 100mV
Pre-Vth
Q
GS1
6.0
V
DS = 16V, ID = 15A
Gate-Source Charge
Post-Vth
Q
GS2
1.4
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
4.1
Switch Chg(Q
gs2 + Qgd)
Q
sw
5.5
Output Charge
Q
oss
12
V
DS = 16V, VGS = 0
Gate Resistance
R
G
2.0
Turn-on Delay Time
t
d (on)
11
V
DD = 16V, ID = 15A
Rise Time
t
r
11
ns
V
GS = 5.0V
Turn-off Delay Time
t
d (off)
29
Clamped Inductive Load
Fall Time
t
f
9.9
Input Capacitance
C
iss
2335
Output Capacitance
C
oss
400
pF
V
DS = 16V, VGS = 0
Reverse Transfer Capacitance C
rss
119
Electrical Characteristics
Current




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