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IRF7901D1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7901D1 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page www.irf.com 2 IRF7901D1 Parameter Min Typ Max Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage* Static Drain-Source R DS(on) – 28 38 – 23 32 m Ω V GS = 4.5V, ID = 5A on Resistance* Gate Threshold Voltage* V GS(th) 1.0 – – 1.0 – – V V DS = VGS, ID = 250µA Drain-Source Leakage I DSS – – 30 – – 30 µA V DS = 24V, VGS = 0 – – 0.15 – – 4.3 mA V DS = 24V, VGS = 0, TJ = 125°C Gate-Source Leakage I GSS – – ±100 – – ±100 nA V GS = ±20V Current* Total Gate Charge* Q G cont – 7.6 10.5 – 15.5 21.0 V GS = 5V, VDS = 16V, ID = 5A Q G synch – 6.7 9.0 – 13.5 18.3 V GS = 5V, VDS= 100mV, ID = 5A Pre-Vth Q GS1 – 2.0 – – 5.5 – V DS = 16V, ID = 5A Gate-Source Charge Post-Vth Q GS2 – 0.5 – – 0.9 – nC Gate-Source Charge Gate to Drain Charge Q GD – 1.9 – – 4.7 – Switch Charge* Q sw – 2.4 3.8 – 5.6 9.0 (Q gs2 + Qgd) Output Charge* Q oss – 13.5 18.0 – 9.0 12.3 V DS = 16V, VGS = 0 Gate Resistance R G – 3.4 – – 4.3 – Ω Input Capacitance C iss – 780 – – 1810 – Output Capacitance C oss – 430 – – 310 – pF V DS = 16V, VGS = 0, f = 1MHz Transfer Capacitance C rss – 30 – – 110 – Turn-On Delay Time t d(on) – 7.2 – – 10.4 – V DD = 16V, ID = 5A, VGS = 5V Rise Time t r – 13.8 – – 16.4 – ns Clamped inductive load Turn-Off Delay Time t d(off) – 14.7 – – 14.6 – See test diagram Fig 17. FallTime t f –8–– 5.2 – Electrical Characteristics Q1 - Control FET Q2 - Synch FET & Schottky Source-Drain Ratings and Characteristics Q1 Q2 & parallel Schottky Parameter Min Typ Max Min Typ Max Units Conditions Diode Forward V SD – 0.7 1.0 – 0.48 0.52 V I S = 1A, VGS = 0V Voltage* k Reverse Recovery Q rr – 62.3 – – 8.9 – nC dl/dt = 700A/us Charge V DS = 16V, VGS = 0V, IS = 5A Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. m Combined Q1, Q2 I RMS @ Pwr Vout pins. Calculated continuous current based on maximum allowable junction temperature; switching or other losses will decrease RMS current capability When mounted on IRNBPS2 design kit. Measured as device T J to Pwr leads (V in & Vout) * Devices are 100% tested to these parameters. |
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