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RJH60D1DPP-E0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH60D1DPP-E0
Description  600V - 10A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60D1DPP-E0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJH60D1DPP-E0
Preliminary
R07DS0893EJ0100 Rev.1.00
Page 4 of 9
Nov 01, 2012
4.0
3.0
2.0
3.5
2.5
1.5
1.0
−25
0
25
75
125
50
100
150
10 A
5 A
IC = 20 A
VGE = 15 V
Pulse Test
0
40
30
20
10
0
4
812
20
16
VCE = 10 V
Pulse Test
Tc = 25°C
150°C
10
8
6
4
2
0
Typical Transfer Characteristics
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Case Temparature Tc (°C)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25
0
25
75
125
50
100
150
VCE = 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
IC = 10 mA
5
4
3
2
1
0
Frequency Characteristics (Typical)
Frequency f (kHz)
1100
10
1000
Tj = 125°C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5
Ω, duty = 50%
0
Collector current wave
(Square wave)
1
3
2
4
5
4
812
20
16
Tc = 25°C
Pulse Test
IC = 20 A
10 A
5 A
1
3
2
4
5
4
812
20
16
Tc = 150°C
Pulse Test
IC = 20 A
10 A
5 A


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