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RJK4512DPP-E0 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK4512DPP-E0 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJK4512DPP-E0 Preliminary R07DS1010EJ0100 Rev.1.00 Page 3 of 6 Feb 12, 2013 Main Characteristics 20 16 12 8 4 0 0 2 468 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 1 100 10 1 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) 02 46 8 10 10 100 0.1 1 0.01 0 0.4 0.2 0.6 0.8 1.2 1.0 −25 0 50 2575 100 125 150 0.01 0.1 1 10 100 1 10 100 1000 0.1 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di / dt = 100 A / μs VGS = 0, Ta = 25°C ID = 14 A VDS = 10 V Pulse Test Tc = 75 °C 25 °C −25°C VGS = 10 V Ta = 25 °C Pulse Test 5.4 V 5.2 V 5.6 V 5.8 V VGS = 5 V Pulse Test Ta = 25 °C Tc = 25 °C 1 shot Operation in this area is limited by RDS(on) 10 μs PW = 100 μs VGS = 10 V Pulse Test 7 A 3.5 A 6 V 7 V 10 V 6.2 V |
Similar Part No. - RJK4512DPP-E0_15 |
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Similar Description - RJK4512DPP-E0_15 |
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